Journal Title : International Journal of Modern Trends in Engineering and Science
Author’s Name : Jayabalaji.G, K.Gowri
Volume 01 Issue o4 April 2014
ISSN no: 2348-3121
Page no: 5-9
Abstract— SRAM is a CMOS ICs and it uses 8Transistor Sram to store a bit. This paper represents the simulation of different SRAM cells and their comparative analysis on parameters Power Supply Voltage. All the simulations have been carried out Tanner EDA tool. The most research on the power consumption of 8T SRAM has been focused on the static power dissipation and the power dissipated by the leakage current. On the other hand, as the current VLSI technology scaled down, the sub-threshold current increases which further increases the power consumption. In this paper we have proposed 8 Transistor SRAM or cells using MCML technology which will reduce the leakage power in SRAM cell and will control the sub-threshold current. The results of 8 transistor SRAM cell array using MCML technology in represents that there is a significant reduction in power dissipation and leakage current using MCML technology.
Keywords—8 transistor sram; mcml concept.
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